Simulate organic solar cells, in steady state, time and frequency domain. Use the advanced optical and drift diffusion models to better understand and bring meaning to your experimental results. The model includes pre-calibrated simulations to real world OPV devices, to help you start simulating your real world device quickly. Use the model to:
Change the layer thicknesses, material types and recombination constants to reproduce your experimental data from your OPV device made from your novel material.
Extract recombination and mobility constants from your devices.
Use the advanced optical models to design and optimize devices before you fabricate them, thus saving you time in the lab.
Understand exactly which losses you need to eliminate to boost your device performance.
Simulate PL/EL spectra from first principles.
Perform advanced device modeling such as PL/EL simulation, and impact of Density of States on solar cell efficiency.
OghmaNano contains the all the physical models needed to simulate Perovskite solar cells, in both steady sate and time domain including:
Advanced drift diffusion models.
Detailed optical models, connected to a large materials database.
A mobile ion solver, watch the mobile ions move within your device as you apply light and voltage pulses.
Perform voltage sweeps in full time domain as they would be performed in a lab.
Study hysteresis effects
Animate and plot the interaction of mobile ions, charge carriers and photons in time domain to get a real understanding of why your device performs as it does
Simulate OLEDs and light emission
A walk through of how to simulate OLEDs the video includes sound.
Use OghmaNano to simulate OLEDs and other light emitting devices. OghmaNano includes advanced ray tracing and photon emission models to help you understand the performance of your light emitting device. It includes the following features:
Advanced ray tracing models to help you understand and visualize the path light takes our of a device.
Calculate the probability of photon escape from the device.
Calculate the emission spectra from within a device.
Simulate PL/EL spectra from first principles.
Large area devices
A walk through of simulating large area devices
Simulation of gravure printed devices using a resistor network
OghmaNano can be used to simulate very large area devices, by approximating the device using a 3D resistor and diode network. Arbitrary 3D structures can be generated such as hexagonal contacts and then turned into complex resistor networks which can be used to understand the flow of current through the device. Shading can be taken into account using optical models, and thus current voltage curves generated for devices >1cm2 with arbitrary geometries. Watch these videos to understand the simulation process.
Define arbitrary 3D structures and simulate shading beneath them
Automaticity generate complex 3D circuits consisting of diodes and resistors representing your large area device
Calculate resistance maps to understand how geometry affects performance
Virtually upscale devices to understand final performance before the device is fabricated.
TE/TM Optical mode solvers
A walk through of simulating large area devices
Simulation of gravure printed devices using a resistor network
OghmaNano can be used to simulate very large area devices, by approximating the device using a 3D resistor and diode network. Arbitrary 3D structures can be generated such as hexagonal contacts and then turned into complex resistor networks which can be used to understand the flow of current through the device. Shading can be taken into account using optical models, and thus current voltage curves generated for devices >1cm2 with arbitrary geometries. Watch these videos to understand the simulation process.
Define arbitrary 3D structures and simulate shading beneath them
Automaticity generate complex 3D circuits consisting of diodes and resistors representing your large area device
Calculate resistance maps to understand how geometry affects performance
Virtually upscale devices to understand final performance before the device is fabricated.
Designing optical filters
Designing reflective coatings using OghmaNano.
OghmaNano's advanced optical solvers will enable you to understand where photons are being absorbed and generated in your devices.
Features includes:
Transfer matrix models to understand where light is being absorbed/reflected
An extensive materials data base with n/k parameters as a function of wavelegnth for over 2200 materials.
The spectra of LEDs, Xenon lamps, and lasers.
The ability to import your own material and laser spectra so your experiment and simulation match exactly.
Advanced ray-tracing models to understand how light escapes your device.
Advanced ray tracing and micro lens design
Ray tracing in 3D structures
OghmaNano's advanced advanced 3D ray tracing module will enable you to understand how light escapes devices such as OLEDs.
Features includes:
3D modeling of light within your device
Calculate the escape probability of photons as a function of wavelength/viewing angle
Emission spectradata base with easy import function
Calculate the RGB values of emitted light as a function of viewing angle
Multiple emission layers per device.
Simulate microlenses, and other structures to help light exit and enter the device.
Advanced polygon based ray tracing model, written in a low level language for maximum simulation speed.
Simulate OFETs and other 2D structures
A walk through of how to simulate OFETs the video includes sound.
OghmaNano includes a 2D electrical model which enables it to be used for organic filed effect transistor (OFET) simulation. The 2D model includes:
Arbitrary charge densities on top or bottom contacts.
Ability to define as many top contacts as desired.
Stable high voltage algorithms enabling voltages over 200V to be simulated.
Ability to simulate devices with very asymmetric dimensions, i.e. transistors with 20mm length and 200nm channel width.
Light/dark JV curves, dark JV curves and Suns-Voc curves
Use OghmaNano's advanced algorithms and easy to use interface to simulate light and dark JV curves. Compare these results to your experimental data to understand why your device is working well or poorly. Vary the light intensity from dark to 100 suns, to understand how your device behaves over all conditions. Use OghmaNano's thermal model to understand how your device behaves over a range of temperatures. Simulation types include:
Understand your transient experimental results with OghmaNano. Simulate Transient Photovoltage, Transient Photocurrent, CELIV experiments. OghmaNano's efficient time domain solver enables you to simulate time domain experiments in under a second. Then use OghmaNano's advanced fitting algorithms to fit the simulation to your data.
Get a better understanding of your data by using OghmaNano to simulate Intensity Modulated Photocurrent Spectroscopy (IMPS) and Impedance spectroscopy (IS) experiments. Understand the influence of mobility and carrier trapping, recombination and parasitic components on the frequency response of your device. Use voltage or light to module your device and watch the current and voltage change as a function of frequency. Go back and examine the time domain transients to understand how phase changes as a function of time. Key features include:
Easy simulation setup
Re(i) - Im(i) plots
Frequency - Re(i)plots
Frequency - Im(i)plots
Examine results in both frequency and full time domain
Quickly switch between IMPS/IS and JV simulations on the same device
Fitting the model to experimental data, to extract recombination and mobility.
Bring meaning to your experimental data by fitting the model against it to extract physical parameters such as mobility and recombination constants. Key features include:
Extract physical constants from data
Easy to use fitting interface for importing experimental data, can read .txt, .csv and .dat files.
Fast fitting using the robust a downhill simplex algorithm
Fit to steady state or time domain data
Quickly extract physical constants from experimental
Watch in real time as the fitting progresses
Fit to multiple data sets at the same time form the same device, to extract a global set of physical parameters.
